Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator
Kuan-Wei Lee, Kai-Lin Lee, Xian-Zheng Lin, Chao-Hsien Tu, Yeong-Her WangVolume:
54
Year:
2007
Language:
english
Pages:
7
DOI:
10.1109/ted.2006.890599
File:
PDF, 452 KB
english, 2007