Influence of the Source–Gate Distance on the AlGaN/GaN HEMT...

IEEE Transactions on Electron Devices 2007 Vol. 54; Iss. 5

Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance

Russo, S., Di Carlo, A.
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Volume:
54
Year:
2007
Language:
english
Pages:
5
DOI:
10.1109/ted.2007.894614
File:
PDF, 250 KB
english, 2007
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