Empirically Verified Thermodynamic Model of Gate...

Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to HfO2 and ZrO2 Gate Insulators

Hamadeh, E.A., Niemann, D.L., Gunther, N.G., Rahman, M.
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Volume:
54
Year:
2007
Language:
english
Pages:
7
DOI:
10.1109/ted.2007.902903
File:
PDF, 1.02 MB
english, 2007
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