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Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to HfO2 and ZrO2 Gate Insulators
Hamadeh, E.A., Niemann, D.L., Gunther, N.G., Rahman, M.Volume:
54
Year:
2007
Language:
english
Pages:
7
DOI:
10.1109/ted.2007.902903
File:
PDF, 1.02 MB
english, 2007