Electrical Characteristics of Memory Devices With a High- k HfO2 Trapping Layer and Dual SiO2/Si3N4 Tunneling Layer
Ying Qian Wang, Wan Sik Hwang, Gang Zhang, Samudra, G., Yee-Chia Yeo, Won Jong YooVolume:
54
Year:
2007
Language:
english
Pages:
7
DOI:
10.1109/ted.2007.904396
File:
PDF, 737 KB
english, 2007