On the Correct Extraction of Interface Trap Density of MOS...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 2

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.
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Volume:
55
Year:
2008
Language:
english
Pages:
10
DOI:
10.1109/ted.2007.912365
File:
PDF, 481 KB
english, 2008
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