A Low-Frequency Noise Model for Four-Gate Field-Effect...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 3

A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors

Tejada, J.A.J., Rodriguez, A.L., Godoy, A., Villanueva, J.A.L., Gomez-Campos, F.M., Rodriguez-Bolivar, S.
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Volume:
55
Year:
2008
Language:
english
Pages:
8
DOI:
10.1109/ted.2007.914473
File:
PDF, 401 KB
english, 2008
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