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Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs
Chleirigh, C.N., Theodore, N.D., Fukuyama, H., Mure, S., Ehrke, H.-U., Domenicucci, A., Hoyt, J.L.Volume:
55
Year:
2008
Language:
english
Pages:
8
DOI:
10.1109/ted.2008.2003228
File:
PDF, 1.17 MB
english, 2008