Three-Dimensional Closed-Form Model for Potential Barrier...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 12

Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for and Subthreshold Slope

Kloes, A., Weidemann, M., Goebel, D., Bosworth, B.T.
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Volume:
55
Year:
2008
Language:
english
Pages:
9
DOI:
10.1109/ted.2008.2006535
File:
PDF, 478 KB
english, 2008
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