Physical Description of Quasi-Saturation and...

IEEE Transactions on Electron Devices 2009 Vol. 56; Iss. 3

Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs

Lei Wang, Jun Wang, Chao Gao, Jian Hu, Li, P., Wenjun Li, Yang, S.H.Y.
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Volume:
56
Year:
2009
Language:
english
Pages:
7
DOI:
10.1109/ted.2008.2011575
File:
PDF, 489 KB
english, 2009
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