Shallow-Trench-Isolation (STI)-Induced...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 6

Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

Su, V.C., Kuo, J.B., Lin, I.S., Guan-Shyan Lin, Chen, D.C., Chune-Sin Yeh, Cheng-Tzung Tsai, Ma, M.
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Volume:
55
Year:
2008
Language:
english
Pages:
5
DOI:
10.1109/ted.2008.922858
File:
PDF, 717 KB
english, 2008
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