A Physical Model of High Temperature 4H-SiC MOSFETs

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 8

A Physical Model of High Temperature 4H-SiC MOSFETs

Potbhare, S., Goldsman, N., Lelis, A., McGarrity, J.M., McLean, F.B., Habersat, D.
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Volume:
55
Year:
2008
Language:
english
Pages:
12
DOI:
10.1109/ted.2008.926665
File:
PDF, 1.38 MB
english, 2008
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