A Charge-Based Model for Long-Channel Cylindrical...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 8

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

Feng Liu, Jin He, Lining Zhang, Jian Zhang, Jinghua Hu, Chenyue Ma, Mansun Chan
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Volume:
55
Year:
2008
Language:
english
Pages:
8
DOI:
10.1109/ted.2008.926735
File:
PDF, 1007 KB
english, 2008
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