A New Impact-Ionization Current Model Applicable to Both...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 9

A New Impact-Ionization Current Model Applicable to Both Bulk and SOI MOSFETs by Considering Self-Lattice-Heating

Chengqing Wei, Guan Huei See, Xing Zhou, Lap Chan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
55
Year:
2008
Language:
english
Pages:
8
DOI:
10.1109/ted.2008.927389
File:
PDF, 873 KB
english, 2008
Conversion to is in progress
Conversion to is failed