Threshold-Voltage Reduction of FinFETs by Ta/Mo...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 9

Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application

Matsukawa, T., Endo, K., Yongxun Liu, O'uchi, S., Ishikawa, Y., Yamauchi, H., Tsukada, J., Ishii, K., Masahara, M., Sakamoto, K., Suzuki, E.
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Volume:
55
Year:
2008
Language:
english
Pages:
8
DOI:
10.1109/ted.2008.927648
File:
PDF, 1.05 MB
english, 2008
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