“Ground-Referenced” Model for Three-Terminal Symmetric...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 9

“Ground-Referenced” Model for Three-Terminal Symmetric Double-Gate MOSFETs With Source/Drain Symmetry

Guojun Zhu, Guan Huei See, Shihuan Lin, Xing Zhou
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Volume:
55
Year:
2008
Language:
english
Pages:
5
DOI:
10.1109/ted.2008.928022
File:
PDF, 427 KB
english, 2008
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