High-Performance Metal/High- n- and p-MOSFETs With Top-Cut...

IEEE Transactions on Electron Devices 2009 Vol. 56; Iss. 4

High-Performance Metal/High- n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates

Mayuzumi, S., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Tai, K., Wakabayashi, H., Tsukamoto, M., Nagashima, N.
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Volume:
56
Year:
2009
Language:
english
Pages:
7
DOI:
10.1109/ted.2009.2014192
File:
PDF, 547 KB
english, 2009
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