On the Scaling of Flash Cell Spacer for Gate Disturb and...

IEEE Transactions on Electron Devices 2009 Vol. 56; Iss. 9

On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention Optimization

Yung-Huei Lee, McMahon, W., Lu, Y.-L.R., Tewg, J.-Y.J., Ma, S.T.
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Volume:
56
Year:
2009
Language:
english
Pages:
7
DOI:
10.1109/ted.2009.2025912
File:
PDF, 630 KB
english, 2009
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