Convergence of Hot-Carrier-Induced Saturation Region Drain...

IEEE Transactions on Electron Devices 2009 Vol. 56; Iss. 11

Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

Chen, J.F., Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Kenneth Wu
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Volume:
56
Year:
2009
Language:
english
Pages:
5
DOI:
10.1109/ted.2009.2030443
File:
PDF, 652 KB
english, 2009
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