Breakdown Voltage for Superjunction Power Devices With...

IEEE Transactions on Electron Devices 2009 Vol. 56; Iss. 12

Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Han Wang, Napoli, E., Udrea, F.
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Volume:
56
Year:
2009
Language:
english
Pages:
9
DOI:
10.1109/ted.2009.2032595
File:
PDF, 391 KB
english, 2009
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