Subcircuit Compact Model for Dopant-Segregated Schottky...

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 4

Subcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETs

Guojun Zhu, Xing Zhou, Yoke-King Chin, Kin Leong Pey, Junbin Zhang, Guan Huei See, Shihuan Lin, Yafei Yan, Zuhui Chen
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Volume:
57
Year:
2010
Language:
english
Pages:
10
DOI:
10.1109/ted.2010.2041513
File:
PDF, 1.55 MB
english, 2010
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