Relation Between the Mobility, Noise, and Channel...

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 7

Relation Between the Mobility, Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Gaubert, P., Teramoto, A., Weitao Cheng, Ohmi, T.
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Volume:
57
Year:
2010
Language:
english
Pages:
11
DOI:
10.1109/ted.2010.2047584
File:
PDF, 667 KB
english, 2010
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