Modeling Nonquasi-Static Effects in SiGe HBTs

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 7

Modeling Nonquasi-Static Effects in SiGe HBTs

Jacob, J., DasGupta, A., Schröter, M., Chakravorty, A.
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Volume:
57
Year:
2010
Language:
english
Pages:
8
DOI:
10.1109/ted.2010.2049077
File:
PDF, 299 KB
english, 2010
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