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A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles
Silvestri, L., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G.Volume:
57
Year:
2010
Language:
english
Pages:
8
DOI:
10.1109/ted.2010.2049210
File:
PDF, 410 KB
english, 2010