High-Current-Gain Direct-Growth GaN/InGaN Double...

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 11

High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

Yi-Che Lee, Yun Zhang, Hee-Jin Kim, Suk Choi, Lochner, Z., Dupuis, R.D., Jae-Hyun Ryou, Shyh-Chiang Shen
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Volume:
57
Year:
2010
Language:
english
Pages:
6
DOI:
10.1109/ted.2010.2064316
File:
PDF, 569 KB
english, 2010
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