AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage...

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 11

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low

Bahat-Treidel, E., Brunner, F., Hilt, O., Cho, E., Wurfl, J., Trankle, G.
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Volume:
57
Year:
2010
Language:
english
Pages:
9
DOI:
10.1109/ted.2010.2069566
File:
PDF, 1.73 MB
english, 2010
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