Comprehensive Study on the Bias-Dependent...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 2

Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

Zhi Hong Liu, Geok Ing Ng, Arulkumaran, S., Ye Kyaw Thu Maung, Khoon Leng Teo, Siew Chuen Foo, Sahmuganathan, V.
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Volume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2010.2093144
File:
PDF, 849 KB
english, 2011
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