Device Characteristics and Equivalent Circuits for NMOS...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 4

Device Characteristics and Equivalent Circuits for NMOS Gate-to-Drain Soft and Hard Breakdown in Polysilicon/SiON Gate Stacks

Nicollian, P.E., Cakici, R.T., Krishnan, A.T., Reddy, V.K., Seshadri, A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
58
Year:
2011
Language:
english
Pages:
6
DOI:
10.1109/ted.2011.2105878
File:
PDF, 612 KB
english, 2011
Conversion to is in progress
Conversion to is failed