Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations
Vianello, E., Driussi, F., Perniola, L., Molas, G., Colonna, J.-P., De Salvo, B., Selmi, L.Volume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2011.2140116
File:
PDF, 576 KB
english, 2011