Improved Subthreshold Swing and Gate-Bias Stressing...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 7

Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type Thin-Film Transistors Using a High- Gate Dielectric Grown on a Substrate by Pulsed Laser Ablation

Xiao Zou, Guojia Fang, Jiawei Wan, Xun He, Haoning Wang, Nishuang Liu, Hao Long, Xingzhong Zhao
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Volume:
58
Year:
2011
Language:
english
Pages:
5
DOI:
10.1109/ted.2011.2142313
File:
PDF, 499 KB
english, 2011
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