An Investigation of DC and RF Safe Operating Area of n-p-n...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 8

An Investigation of DC and RF Safe Operating Area of n-p-n p-n-p SiGe HBTs on SOI

Peng Cheng, Seth, S., Cressler, J.D., Cestra, G., Krakowski, T., Babcock, J.A., Buchholz, A.
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Volume:
58
Year:
2011
Language:
english
Pages:
9
DOI:
10.1109/ted.2011.2157924
File:
PDF, 1.34 MB
english, 2011
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