Physics-Based Analytical Model for HCS Degradation in...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 9

Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

Reggiani, S., Poli, S., Denison, M., Gnani, E., Gnudi, A., Baccarani, G., Pendharkar, S., Wise, R.
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Volume:
58
Year:
2011
Language:
english
Pages:
9
DOI:
10.1109/ted.2011.2160023
File:
PDF, 1.13 MB
english, 2011
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