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Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device
Jong Kyung Park, Youngmin Park, Seok-Hee Lee, Sung Kyu Im, Jae Sub Oh, Moon Sig Joo, Kwon Hong, Byung Jin ChoVolume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2011.2161993
File:
PDF, 855 KB
english, 2011