A New Charge-Pumping Technique for a Double-Gated SOI...

IEEE Transactions on Electron Devices 2012 Vol. 59; Iss. 1

A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients

Sungho Kim, Sung-Jin Choi, Dong-Il Moon, Yang-Kyu Choi
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Volume:
59
Year:
2012
Language:
english
Pages:
6
DOI:
10.1109/ted.2011.2171489
File:
PDF, 585 KB
english, 2012
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