A Novel High-Voltage ( 600 V) LDMOSFET With Buried N-Layer...

IEEE Transactions on Electron Devices 2012 Vol. 59; Iss. 4

A Novel High-Voltage ( 600 V) LDMOSFET With Buried N-Layer in Partial SOI Technology

Yue Hu, Qijun Huang, Gaofeng Wang, Sheng Chang, Hao Wang
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Volume:
59
Year:
2012
Language:
english
Pages:
6
DOI:
10.1109/ted.2012.2185498
File:
PDF, 384 KB
english, 2012
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