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Effects of pulsed irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam
A. V. Dvurechenskii, V. A. Zinov’ev, V. A. Markov, R. Crötzchel, K. -X. HeinigVolume:
64
Language:
english
Pages:
6
DOI:
10.1134/1.567291
Date:
November, 1996
File:
PDF, 6.44 MB
english, 1996