Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, Wen-Shiung LourVolume:
46
Language:
english
Pages:
5
DOI:
10.1134/s1063782612040227
Date:
April, 2012
File:
PDF, 241 KB
english, 2012