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Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, W. V. Lundin, M. A. Sinitsyn, M. M. Rozhavskaya, A. F. Tsatsulnikov, S. I. Troshkov, N. A. FeoktistovVolume:
38
Language:
english
Pages:
3
DOI:
10.1134/s1063785012030261
Date:
March, 2012
File:
PDF, 449 KB
english, 2012