Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes
E. A. Grebenshchikova, D. A. Starostenko, V. V. Sherstnev, G. G. Konovalov, I. A. Andreev, O. Yu. Serebrennikova, N. D. Il’inskaya, Yu. P. YakovlevVolume:
38
Language:
english
Pages:
4
DOI:
10.1134/s1063785012050239
Date:
May, 2012
File:
PDF, 240 KB
english, 2012