Improved ground-state modulation characteristics in 1.3 μm...

Nanoscale Research Letters 2011 / 12 Vol. 6; Iss. 1

Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, Rui Wang
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Volume:
6
Language:
english
DOI:
10.1186/1556-276x-6-382
Date:
December, 2011
File:
PDF, 296 KB
english, 2011
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