Lattice parameter accommodation between GaAs(111) nanowires...

Nanoscale Research Letters 2012 / 12 Vol. 7; Iss. 1

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Anton Davydok, Steffen Breuer, Andreas Biermanns, Lutz Geelhaar, Ullrich Pietsch
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Volume:
7
Language:
english
DOI:
10.1186/1556-276x-7-109
Date:
December, 2012
File:
PDF, 552 KB
english, 2012
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