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Computer simulation and experimental investigation of the crystal structure and electronic properties of InN/Si and GaN/Si thin films
Abgaryan, K. K., Bazhanov, D. I., Mikheev, S. Yu., Mutigullin, I. V., Ryzhov, Yu. A.Volume:
76
Language:
english
Pages:
3
Journal:
Bulletin of the Russian Academy of Sciences: Physics
DOI:
10.3103/s1062873812060032
Date:
June, 2012
File:
PDF, 511 KB
english, 2012