Improved crystal quality ofa-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition
Sung Hyun Park, Daeyoung Moon, Bumho Kim, Kisu Joo, Duck-Jae You, Dong-Uk Kim, Hojun Chang, Heonsu Jeon, Yasushi Nanishi, Euijoon YoonVolume:
60
Language:
english
Pages:
4
DOI:
10.3938/jkps.60.1297
Date:
April, 2012
File:
PDF, 266 KB
english, 2012