AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique
Procop, M., Klein, A., Rechenberg, I., Kr�ger, D.Volume:
25
Language:
english
Pages:
6
Journal:
Surface and Interface Analysis
DOI:
10.1002/(sici)1096-9918(199706)25:63.0.co;2-s
Date:
June, 1997
File:
PDF, 426 KB
english, 1997