Design and epitaxy of 15 μm InGaAsP-InP MQW material for a...

Design and epitaxy of 15 μm InGaAsP-InP MQW material for a transistor laser

Duan, Zigang, Shi, Wei, Chrostowski, Lukas, Huang, Xiaodong, Zhou, Ning, Chai, Guangyue
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Volume:
18
Year:
2010
Language:
english
Journal:
oe/18/2/oe-18-2-1501.pdf
DOI:
10.1364/OE.18.001501
File:
PDF, 266 KB
english, 2010
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