Effect of the thickness of undoped GaN interlayers between...

Optics Express 2011 Vol. 19; Iss. 19

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes

Lu, Taiping, Li, Shuti, Zhang, Kang, Liu, Chao, Yin, Yian, Wu, Lejuan, Wang, Hailong, Yang, Xiaodong, Xiao, Guowei, Zhou, Yugang
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Volume:
19
Year:
2011
Language:
english
Journal:
oe/19/19/oe-19-19-18319.pdf
DOI:
10.1364/OE.19.018319
File:
PDF, 974 KB
english, 2011
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