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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation
Thalhammer, R., Furbock, C., Seliger, N., Deboy, G., Gornik, E., Wachutka, G.Year:
1998
Language:
english
Pages:
4
DOI:
10.1109/ispsd.1998.702668
File:
PDF, 305 KB
english, 1998