Unified Physical Model of Bipolar Oxide-Based Resistive...

IEEE Electron Device Letters 2009 Vol. 30; Iss. 12

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Bing Sun, Haowei Zhang, Lifeng Liu, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, Bin Yu
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Volume:
30
Year:
2009
Language:
english
Pages:
3
DOI:
10.1109/led.2009.2032308
File:
PDF, 282 KB
english, 2009
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