Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method
Nakanishi, Nobuto, Arie, Hiroyuki, Kunimune, Yorinobu, Ide, Takashi, Hirose, Yukinori, Hattori, Nobuyoshi, Koyama, ToruVolume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4747838
File:
PDF, 2.36 MB
english, 2012