Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Klenovský, P., Brehm, M., Křápek, V., Lausecker, E., Munzar, D., Hackl, F., Steiner, H., Fromherz, T., Bauer, G., Humlíček, J.Volume:
86
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.86.115305
Date:
September, 2012
File:
PDF, 1.04 MB
english, 2012