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Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect
Wittmaack, K.Volume:
26
Language:
english
Pages:
16
Journal:
Surface and Interface Analysis
DOI:
10.1002/(sici)1096-9918(199804)26:43.0.co;2-9
Date:
April, 1998
File:
PDF, 429 KB
english, 1998